Invention Grant
- Patent Title: Conductive sidewall for microbumps
- Patent Title (中): 导电侧壁为微丸
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Application No.: US12837717Application Date: 2010-07-16
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Publication No.: US08482125B2Publication Date: 2013-07-09
- Inventor: Arvind Chandrasekaran , Shiqun Gu , Christine S. Hau-Riege
- Applicant: Arvind Chandrasekaran , Shiqun Gu , Christine S. Hau-Riege
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Michelle Gallardo
- Main IPC: H01L23/488
- IPC: H01L23/488

Abstract:
Electromigration in microbump connections causes voids in the microbumps, which reduces the lifetime of an integrated circuit containing the microbump. Electromigration lifetime may be increased in microbumps by forming a copper shell around the solder. The copper shell of one microbump contacts the copper shell of a second microbump to enclose the solder of the microbump connection. The copper shell allows higher current densities through the microbump. Thus, smaller microbumps may be manufactured on a smaller pitch without suffering failure from electromigration. Additionally, the copper shell reduces shorting or bridging between microbump connections on a substrate.
Public/Granted literature
- US20120012998A1 Conductive Sidewall for Microbumps Public/Granted day:2012-01-19
Information query
IPC分类: