Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13224929Application Date: 2011-09-02
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Publication No.: US08482126B2Publication Date: 2013-07-09
- Inventor: Makoto Wada , Yuichi Yamazaki , Akihiro Kajita , Atsuko Sakata
- Applicant: Makoto Wada , Yuichi Yamazaki , Akihiro Kajita , Atsuko Sakata
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48 ; H01L23/532

Abstract:
According to an embodiment of the present invention, a device includes a substrate, a base body formed on or above the substrate, and a pair of wirings. The base body has a line shape in a plan view and extends along a length direction. The pair of wirings includes first and second catalyst layers formed on both side surfaces of the base body in the length direction of the base body with sandwiching the base body; and first and second graphene layers formed on both side surfaces of the base body in a manner of contacting the first and second catalyst layers, respectively, and extending along the length direction of the base body, the graphene layers includes a plurality of graphenes laminated perpendicularly with respect to both side surfaces of the base body, respectively.
Public/Granted literature
- US20130056873A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-03-07
Information query
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