Invention Grant
- Patent Title: Current detection circuit and semiconductor integrated circuit
- Patent Title (中): 电流检测电路和半导体集成电路
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Application No.: US13032357Application Date: 2011-02-22
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Publication No.: US08482320B2Publication Date: 2013-07-09
- Inventor: Seiji Otake
- Applicant: Seiji Otake
- Applicant Address: BM Hamilton
- Assignee: ON Semiconductor Trading, Ltd.
- Current Assignee: ON Semiconductor Trading, Ltd.
- Current Assignee Address: BM Hamilton
- Agency: Morrison & Foerster LLP
- Priority: JP2010-036878 20100223
- Main IPC: H03K3/00
- IPC: H03K3/00

Abstract:
The invention provides a current detection circuit for a transistor, that does not influence a current flowing through the transistor, and minimizes a power loss, an increase of the pattern area and so on. A current detection circuit includes a wiring connected to a MOS transistor and forming a current path of a current of the MOS transistor, a current detection MOS transistor of which the gate is connected to the wiring, that flows a current corresponding to the potential of the gate, and a current detector detecting a current flowing through the current detection MOS transistor. The current detection circuit is configured including a load resistor connected to the current detection MOS transistor and a voltage detection circuit detecting a drain voltage of the current detection MOS transistor.
Public/Granted literature
- US20110204952A1 CURRENT DETECTION CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2011-08-25
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