Invention Grant
- Patent Title: High frequency semiconductor switch
- Patent Title (中): 高频半导体开关
-
Application No.: US13355257Application Date: 2012-01-20
-
Publication No.: US08482337B2Publication Date: 2013-07-09
- Inventor: Tsuyoshi Sugiura
- Applicant: Tsuyoshi Sugiura
- Applicant Address: KR Gyunggi-Do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Gyunggi-Do
- Agency: McDermott Will & Emery LLP
- Main IPC: H03K17/687
- IPC: H03K17/687

Abstract:
There is provided a high frequency semiconductor switch having an FET designed in consideration of characteristics required for a transmission terminal and a reception terminal. The high frequency semiconductor switch includes a plurality of field effect transistors that each include a source region and a drain region formed on a substrate to be spaced apart by a predetermined distance, a gate formed on the substrate to be disposed at the predetermined distance, a source contact formed on the substrate to be connected with the source region, and a drain contact formed on the substrate to be connected with the drain region. A distance between a source contact and a drain contact of a reception terminal side transistor is longer than a distance between a source contact and a drain contact of a transmission terminal side transistor.
Public/Granted literature
- US20120154018A1 HIGH FREQUENCY SEMICONDUCTOR SWITCH Public/Granted day:2012-06-21
Information query
IPC分类: