Invention Grant
- Patent Title: Power amplifying device and coupled power amplifying device
- Patent Title (中): 功率放大装置及耦合功率放大装置
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Application No.: US13192751Application Date: 2011-07-28
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Publication No.: US08482354B2Publication Date: 2013-07-09
- Inventor: Keiichi Matsushita
- Applicant: Keiichi Matsushita
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-263451 20101126
- Main IPC: H03F3/18
- IPC: H03F3/18

Abstract:
A power amplifying device includes earth parts which are connected with via holes for grounding, source electrode earth conductors which connect the earth parts, source electrodes which are coupled to the source electrode earth conductors, an inner source electrode which is not in contact with the source electrode earth conductors, a drain electrode, a gate electrode and an air bridge which directly connects the inner source electrode and earth parts.
Public/Granted literature
- US20120133440A1 POWER AMPLIFYING DEVICE AND COUPLED POWER AMPLIFYING DEVICE Public/Granted day:2012-05-31
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