Invention Grant
- Patent Title: Power amplifier
- Patent Title (中): 功率放大器
-
Application No.: US13223738Application Date: 2011-09-01
-
Publication No.: US08482355B2Publication Date: 2013-07-09
- Inventor: Byeong Hak Jo , Yoo Sam Na , Hyeon Seok Hwang , Moon Suk Jeong , Gyu Suck Kim , Moon Sun Kim
- Applicant: Byeong Hak Jo , Yoo Sam Na , Hyeon Seok Hwang , Moon Suk Jeong , Gyu Suck Kim , Moon Sun Kim
- Applicant Address: KR Gyunggi-Do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Gyunggi-Do
- Agency: McDermott Will & Emery LLC
- Main IPC: H03F1/22
- IPC: H03F1/22

Abstract:
There is provided a complementary metal oxide semiconductor (CMOS) power amplifier including: a load unit connected between an operating voltage supply terminal and an output terminal; an amplifying unit formed as a cascode structure between the load unit and a ground, amplifying a power of an input signal input through an input terminal and outputting the amplified signal through an output terminal; and a threshold voltage control unit varying a threshold voltage of the amplifying unit according to a magnitude of the input signal input through the input terminal.
Public/Granted literature
- US20130057349A1 CMOS POWER AMPLIFIER Public/Granted day:2013-03-07
Information query
IPC分类: