Invention Grant
- Patent Title: Dual pinned diode pixel with shutter
- Patent Title (中): 双通道二极管像素与快门
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Application No.: US13285599Application Date: 2011-10-31
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Publication No.: US08482642B2Publication Date: 2013-07-09
- Inventor: Jeffrey Rysinski
- Applicant: Jeffrey Rysinski
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H04N3/14
- IPC: H04N3/14 ; H04N5/335 ; H01L27/00

Abstract:
A pixel having an electronic shutter suitable for use in a pixel array of an imaging device includes a pinned diode and a shutter transistor. The pinned diode is utilized as a storage device while the shutter transistor controls charge transfer from the electronic shutter. The use of a pinned diode as a charge storage device for the electronic shutter permits greater charge transfer efficiency, has lower leakage (or “dark” current), and permits the resulting pixel to have a greater fill factor than pixels utilizing conventional electronic shutter circuits.
Public/Granted literature
- US20120044396A1 DUAL PINNED DIODE PIXEL WITH SHUTTER Public/Granted day:2012-02-23
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