Invention Grant
US08482883B2 Magnetic sensor with perpendicular anisotrophy free layer and side shields
有权
具有垂直各向异性自由层和侧面屏蔽的磁性传感器
- Patent Title: Magnetic sensor with perpendicular anisotrophy free layer and side shields
- Patent Title (中): 具有垂直各向异性自由层和侧面屏蔽的磁性传感器
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Application No.: US13354838Application Date: 2012-01-20
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Publication No.: US08482883B2Publication Date: 2013-07-09
- Inventor: Dimitar V. Dimitrov , Zheng Gao , Wonjoon Jung , Paul Edward Anderson , Olle Gunnar Heinonen
- Applicant: Dimitar V. Dimitrov , Zheng Gao , Wonjoon Jung , Paul Edward Anderson , Olle Gunnar Heinonen
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Mueting Raasch & Gebhardt PA
- Main IPC: G11B5/127
- IPC: G11B5/127

Abstract:
A tunneling magneto-resistive reader includes a sensor stack separating a top magnetic shield from a bottom magnetic shield. The sensor stack includes a reference magnetic element having a reference magnetization orientation direction and a free magnetic element having a free magnetization orientation direction substantially perpendicular to the reference magnetization orientation direction. A non-magnetic spacer layer separates the reference magnetic element from the free magnetic element. A first side magnetic shield and a second side magnetic shield is disposed between the top magnetic shield from a bottom magnetic shield, and the sensor stack is between the first side magnetic shield and the second side magnetic shield. The first side magnetic shield and the second side magnetic shield electrically insulates the top magnetic shield from a bottom magnetic shield.
Public/Granted literature
- US20130021697A1 MAGNETIC SENSOR WITH PERPENDICULAR ANISOTROPHY FREE LAYER AND SIDE SHIELDS Public/Granted day:2013-01-24
Information query
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