Invention Grant
- Patent Title: Band-pass structure electrostatic discharge protection circuit
- Patent Title (中): 带通结构静电放电保护电路
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Application No.: US12795429Application Date: 2010-06-07
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Publication No.: US08482889B2Publication Date: 2013-07-09
- Inventor: Bo-Jr Huang , Huei Wang
- Applicant: Bo-Jr Huang , Huei Wang
- Applicant Address: TW Taipei
- Assignee: National Taiwan University
- Current Assignee: National Taiwan University
- Current Assignee Address: TW Taipei
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Priority: TW99102242A 20100127
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H02H3/22

Abstract:
The present invention relates to an electrostatic discharge (ESD) protection circuit, and more particularly to a band-pass structure electrostatic discharge protection circuit. An ESD protection circuit is disposed at the input of a radio frequency (RF) core circuit. The ESD protection circuit comprises a plurality of diodes and inductors constructing a plurality of discharging paths, wherein the diodes and inductors forms a band-pass filter structure. Such that, the RF core circuit with the ESD protection circuit of the present invention feature much higher ESD robustness and better RF performance than the conventional design.
Public/Granted literature
- US20110181990A1 BAND-PASS STRUCTURE ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT Public/Granted day:2011-07-28
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