Invention Grant
- Patent Title: Magnetic memory element with multi-domain storage layer
- Patent Title (中): 具有多域存储层的磁记忆元件
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Application No.: US12938424Application Date: 2010-11-03
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Publication No.: US08482967B2Publication Date: 2013-07-09
- Inventor: Haiwen Xi , Yuankai Zheng , Xiaobin Wang , Dimitar V. Dimitrov , Pat J. Ryan
- Applicant: Haiwen Xi , Yuankai Zheng , Xiaobin Wang , Dimitar V. Dimitrov , Pat J. Ryan
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Hall Estill Attorneys at Law
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/14 ; G11C11/15

Abstract:
An apparatus and method for enhancing data writing and retention to a magnetic memory element, such as in a non-volatile data storage array. In accordance with various embodiments, a programmable memory element has a reference layer and a storage layer. The reference layer is provided with a fixed magnetic orientation. The storage layer is programmed to have a first region with a magnetic orientation antiparallel to said fixed magnetic orientation, and a second region with a magnetic orientation parallel to said fixed magnetic orientation. A thermal assist layer may be incorporated into the memory element to enhance localized heating of the storage layer to aid in the transition of the first region from parallel to antiparallel magnetic orientation during a write operation.
Public/Granted literature
- US20120106239A1 Magnetic Memory Element With Multi-Domain Storage Layer Public/Granted day:2012-05-03
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