Invention Grant
- Patent Title: Non-volatile magnetic tunnel junction transistor
- Patent Title (中): 非易失性磁隧道结晶体管
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Application No.: US12945848Application Date: 2010-11-13
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Publication No.: US08482968B2Publication Date: 2013-07-09
- Inventor: Daniel C. Worledge
- Applicant: Daniel C. Worledge
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Ido Tuchman; Vazken Alexanian
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/14 ; G11C11/15

Abstract:
An example embodiment is an apparatus for controlling a magnetic direction of a magnetic free layer. The apparatus includes a writer with a first magnetic write layer and a second magnetic write layer. Applying a write voltage across first and second magnetic write layers causes a magnetic anisotropy of one of the magnetic write layers to switch from parallel to the plane of the magnetic write layers to orthogonal to the plane of the magnetic write layers. The magnetic write layer with the magnetic anisotropy parallel to the plane of the magnetic write layers induces the magnetic direction in the magnetic free layer.
Public/Granted literature
- US20120120719A1 NON-VOLATILE MAGNETIC TUNNEL JUNCTION TRANSISTOR Public/Granted day:2012-05-17
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