Invention Grant
US08482968B2 Non-volatile magnetic tunnel junction transistor 有权
非易失性磁隧道结晶体管

Non-volatile magnetic tunnel junction transistor
Abstract:
An example embodiment is an apparatus for controlling a magnetic direction of a magnetic free layer. The apparatus includes a writer with a first magnetic write layer and a second magnetic write layer. Applying a write voltage across first and second magnetic write layers causes a magnetic anisotropy of one of the magnetic write layers to switch from parallel to the plane of the magnetic write layers to orthogonal to the plane of the magnetic write layers. The magnetic write layer with the magnetic anisotropy parallel to the plane of the magnetic write layers induces the magnetic direction in the magnetic free layer.
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