Invention Grant
- Patent Title: Multi-bit STRAM memory cells
- Patent Title (中): 多位STRAM存储单元
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Application No.: US13248592Application Date: 2011-09-29
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Publication No.: US08482970B2Publication Date: 2013-07-09
- Inventor: Dimitar V. Dimitrov
- Applicant: Dimitar V. Dimitrov
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Mueting Raasch & Gebhardt
- Main IPC: G11C11/16
- IPC: G11C11/16

Abstract:
A multi-bit spin torque magnetic element that has a ferromagnetic pinned layer having a pinned magnetization orientation, a non-magnetic layer, and a ferromagnetic free layer having a magnetization orientation switchable among at least four directions, the at least four directions being defined by a physical shape of the free layer. The magnetic element has at least four distinct resistance states. Magnetic elements with at least eight magnetization directions are also provided.
Public/Granted literature
- US20120020148A1 MULTI-BIT STRAM MEMORY CELLS Public/Granted day:2012-01-26
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