Invention Grant
US08482976B2 Semiconductor memory device and semiconductor memory system storing multilevel data
有权
存储多层数据的半导体存储器件和半导体存储器系统
- Patent Title: Semiconductor memory device and semiconductor memory system storing multilevel data
- Patent Title (中): 存储多层数据的半导体存储器件和半导体存储器系统
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Application No.: US12504966Application Date: 2009-07-17
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Publication No.: US08482976B2Publication Date: 2013-07-09
- Inventor: Noboru Shibata
- Applicant: Noboru Shibata
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-313559 20081209
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04
Abstract:
A first memory cell stores data of k bits in one cell. A second memory cell stores data of h bits (h
Public/Granted literature
- US20100142270A1 SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY SYSTEM STORING MULTILEVEL DATA Public/Granted day:2010-06-10
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