Invention Grant
US08482979B2 Data path for multi-level cell memory, methods for storing and methods for utilizing a memory array 有权
用于多级单元存储器的数据路径,存储方法和利用存储器阵列的方法

  • Patent Title: Data path for multi-level cell memory, methods for storing and methods for utilizing a memory array
  • Patent Title (中): 用于多级单元存储器的数据路径,存储方法和利用存储器阵列的方法
  • Application No.: US13431837
    Application Date: 2012-03-27
  • Publication No.: US08482979B2
    Publication Date: 2013-07-09
  • Inventor: Mark Bauer
  • Applicant: Mark Bauer
  • Applicant Address: US ID Boise
  • Assignee: Micron Technology, Inc.
  • Current Assignee: Micron Technology, Inc.
  • Current Assignee Address: US ID Boise
  • Agency: Dorsey & Whitney LLP
  • Main IPC: G11C11/34
  • IPC: G11C11/34
Data path for multi-level cell memory, methods for storing and methods for utilizing a memory array
Abstract:
Memories, data paths, methods for storing, and methods for utilizing are disclosed, including a data path for a memory using multi-level memory cells to provide storage of multiple bits per memory cell. One such data path includes a bit mapping circuit and a data converter circuit. Such a bit mapping circuit can be configured to map bits of the original data to an intermediate arrangement of bits and such a data converter circuit can be configured to receive the intermediate arrangement of bits and convert the intermediate arrangement of bits into intermediate data corresponding to a memory state to be stored by memory cells of a memory cell array.
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