Invention Grant
US08483002B2 Antifuse unit cell of nonvolatile memory device for enhancing data sense margin and nonvolatile memory device with the same
有权
用于增强数据检测余量和非易失性存储器件的非易失性存储器件的防漏单元
- Patent Title: Antifuse unit cell of nonvolatile memory device for enhancing data sense margin and nonvolatile memory device with the same
- Patent Title (中): 用于增强数据检测余量和非易失性存储器件的非易失性存储器件的防漏单元
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Application No.: US12609369Application Date: 2009-10-30
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Publication No.: US08483002B2Publication Date: 2013-07-09
- Inventor: Chang-Hee Shin , Ki-Seok Cho , Seong-Do Jeon , Youn-Jang Kim
- Applicant: Chang-Hee Shin , Ki-Seok Cho , Seong-Do Jeon , Youn-Jang Kim
- Applicant Address: KR Cheongju-si
- Assignee: MagnaChip Semiconductor, Ltd.
- Current Assignee: MagnaChip Semiconductor, Ltd.
- Current Assignee Address: KR Cheongju-si
- Agency: NSIP Law
- Priority: KR10-2009-0049834 20090605
- Main IPC: G11C17/16
- IPC: G11C17/16
Abstract:
Disclosed are a unit cell capable of improving a reliability by enhancing a data sensing margin in a read operation, and a nonvolatile memory device with the same. The unit cell of a nonvolatile memory device includes: an antifuse having a first terminal between an input terminal and an output terminal; and a first switching unit coupled between a second terminal of the antifuse and a ground voltage terminal.
Public/Granted literature
- US20100309709A1 UNIT CELL OF NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE WITH THE SAME Public/Granted day:2010-12-09
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