Invention Grant
- Patent Title: Semiconductor light emitting device and fabrication method for semiconductor light emitting device
- Patent Title (中): 半导体发光元件及半导体发光元件的制造方法
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Application No.: US12051449Application Date: 2008-03-19
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Publication No.: US08483252B2Publication Date: 2013-07-09
- Inventor: Nobuaki Hatori , Tsuyoshi Yamamoto , Hisao Sudo , Yasuhiko Arakawa
- Applicant: Nobuaki Hatori , Tsuyoshi Yamamoto , Hisao Sudo , Yasuhiko Arakawa
- Applicant Address: JP Kawasaki JP Tokyo
- Assignee: Fujitsu Limited,The University of Tokyo
- Current Assignee: Fujitsu Limited,The University of Tokyo
- Current Assignee Address: JP Kawasaki JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2007-070655 20070319
- Main IPC: H01S5/00
- IPC: H01S5/00
Abstract:
A semiconductor light emitting device includes a lower cladding layer, an active layer, and an AlGaAs upper cladding layer mounted on a GaAs substrate. The semiconductor light emitting device has a ridge structure including the AlGaAs upper cladding layer. The semiconductor light emitting device further includes an InGaAs etching stop layer provided in contact with the lower side of the AlGaAs upper cladding layer. The InGaAs etching stop layer has a band gap greater than that of the active layer.
Public/Granted literature
- US20080232417A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD FOR SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2008-09-25
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