Invention Grant
US08483627B2 Circuits, processes, devices and systems for full integration of RF front end module including RF power amplifier
有权
用于RF前端模块(包括射频功率放大器)的完全集成的电路,工艺,器件和系统
- Patent Title: Circuits, processes, devices and systems for full integration of RF front end module including RF power amplifier
- Patent Title (中): 用于RF前端模块(包括射频功率放大器)的完全集成的电路,工艺,器件和系统
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Application No.: US12435668Application Date: 2009-05-05
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Publication No.: US08483627B2Publication Date: 2013-07-09
- Inventor: Gireesh Rajendran , Apu Sivadas , Subhashish Mukherjee
- Applicant: Gireesh Rajendran , Apu Sivadas , Subhashish Mukherjee
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent James F. Hollander; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Priority: IN1144/CHE/2008 20080509
- Main IPC: H04B1/44
- IPC: H04B1/44

Abstract:
An electronic circuit comprising a transistor-based RF (radio frequency) power amplifier (112) having balanced outputs (172, 176), a transistor-based receiver RF amplifier (116) having balanced inputs (152, 156) ohmically connected to said balanced outputs (172, 176) respectively of said RF power amplifier (112), and a balun (114) having a primary (182, 186) and a secondary (188), said primary (182, 186) having primary connections and a supply connection (185) of said primary (182, 186) intermediate said primary connections and said primary connections ohmically connected both to said balanced outputs (172, 176) of said RF power amplifier (112) respectively and to said balanced inputs (152, 156) of said receiver RF amplifier, thereby to switchlessly couple RF between the balun (114) and the RF power amplifier (112) and switchlessly couple RF between the balun (114) and the receiver RF amplifier (116). Other electronic circuits, processes, devices and systems are disclosed.
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