Invention Grant
- Patent Title: Method for controlling pattern uniformity of semiconductor device
- Patent Title (中): 控制半导体器件图案均匀性的方法
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Application No.: US12915570Application Date: 2010-10-29
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Publication No.: US08484585B2Publication Date: 2013-07-09
- Inventor: Duk Sun Han , Mi Hye Kim
- Applicant: Duk Sun Han , Mi Hye Kim
- Applicant Address: KR Icheon
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon
- Priority: KR10-2010-0043035 20100507
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A method for controlling uniformity of patterns formed in a semiconductor device includes obtaining simulation contours with respect to respective cases while controlling a size of an outermost pattern and determining a size of the outermost pattern in which uniform distribution values (3σ) value of patterns included in the simulation contours satisfying specific conditions as a size of target outermost pattern.
Public/Granted literature
- US20110276928A1 METHOD FOR CONTROLLING PATTERN UNIFORMITY OF SEMICONDUCTOR DEVICE Public/Granted day:2011-11-10
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