Invention Grant
- Patent Title: Sputtering apparatus having gas supply system
- Patent Title (中): 具有气体供应系统的溅射装置
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Application No.: US12850635Application Date: 2010-08-05
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Publication No.: US08486241B2Publication Date: 2013-07-16
- Inventor: Hsin-Chin Hung
- Applicant: Hsin-Chin Hung
- Applicant Address: TW New Taipei
- Assignee: Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: TW New Taipei
- Agency: Altis Law Group, Inc.
- Priority: TW99115636 20100517
- Main IPC: C23C14/54
- IPC: C23C14/54

Abstract:
An exemplary gas supply system, includes a plurality of first input lines for supplying gas, a plurality of second input lines, a plurality of third input lines, a first mixing tank communicating with the second input lines, a second mixing tank communicating with the third input lines, and a plurality of three-way valves. Each three-way valve is communicated with a first input line, a second input line and a third input line such that gas in the first input lines can be selectively introduced into the first mixing tank or the second mixing tank.
Public/Granted literature
- US20110278163A1 GAS SUPPLY SYSTEM AND SPUTTERING APPARATUS HAVING SAME Public/Granted day:2011-11-17
Information query
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