Invention Grant
- Patent Title: Method for manufacturing light-emitting device
- Patent Title (中): 发光装置的制造方法
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Application No.: US12579067Application Date: 2009-10-14
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Publication No.: US08486736B2Publication Date: 2013-07-16
- Inventor: Kohei Yokoyama , Koichiro Tanaka , Hisao Ikeda
- Applicant: Kohei Yokoyama , Koichiro Tanaka , Hisao Ikeda
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2008-270293 20081020
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method for manufacturing a light-emitting device is provided, which includes a step of forming a light-absorbing layer including an unevenness portion over a first substrate, a step of forming a first organic compound layer over the light-absorbing layer, a step of providing a second substrate over the first substrate with the light-absorbing layer and the first organic compound layer interposed therebetween, and a step of irradiating the light-absorbing layer with light to deposit a second organic compound layer including a material contained in the first organic compound layer onto the second substrate.
Public/Granted literature
- US20100098879A1 Method for Manufacturing Light-Emitting Device Public/Granted day:2010-04-22
Information query
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