Invention Grant
- Patent Title: Process for etching trenches in an integrated optical device
- Patent Title (中): 用于蚀刻集成光学器件中的沟槽的工艺
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Application No.: US13481680Application Date: 2012-05-25
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Publication No.: US08486741B2Publication Date: 2013-07-16
- Inventor: Pietro Montanini , Giovanna Germani , Ilaria Gelmi , Marta Mottura
- Applicant: Pietro Montanini , Giovanna Germani , Ilaria Gelmi , Marta Mottura
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Graybeal Jackson LLP
- Priority: ITRM2004A0445 20050917
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/311 ; H01L21/302
Abstract:
The described process allows trenches to be etched in a structure comprising a support substrate and a multilayer, formed on the substrate, for the definition of wave guides of an integrated optical device and comprises a selective plasma attack in the multilayer through a masking structure that leaves uncovered areas of the multilayer corresponding to the trenches to be etched. Such a masking structure is obtained by forming a mask of metallic material on the multilayer that leaves uncovered the areas corresponding to the trenches to be etched and forming a mask of non-metallic material, for example photoresist, on it that leaves uncovered regions comprising at least part of the areas and an edge portion of the mask of metallic material.
Public/Granted literature
- US20120228260A1 PROCESS FOR ETCHING TRENCHES IN AN INTEGRATED OPTICAL DEVICE Public/Granted day:2012-09-13
Information query
IPC分类:
