Invention Grant
US08486786B2 Enhancing uniformity of a channel semiconductor alloy by forming STI structures after the growth process
有权
通过在生长过程之后形成STI结构来提高沟道半导体合金的均匀性
- Patent Title: Enhancing uniformity of a channel semiconductor alloy by forming STI structures after the growth process
- Patent Title (中): 通过在生长过程之后形成STI结构来提高沟道半导体合金的均匀性
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Application No.: US12776512Application Date: 2010-05-10
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Publication No.: US08486786B2Publication Date: 2013-07-16
- Inventor: Stephan Kronholz , Martin Trentzsch , Richard Carter
- Applicant: Stephan Kronholz , Martin Trentzsch , Richard Carter
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE102009021484 20090515
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/8236
Abstract:
When forming sophisticated gate electrode structures of transistor elements of different type, the threshold adjusting channel semiconductor alloy may be provided prior to forming isolation structures, thereby achieving superior uniformity of the threshold adjusting material. Consequently, threshold variability on a local and global scale of P-channel transistors may be significantly reduced.
Public/Granted literature
- US20100289090A1 ENHANCING UNIFORMITY OF A CHANNEL SEMICONDUCTOR ALLOY BY FORMING STI STRUCTURES AFTER THE GROWTH PROCESS Public/Granted day:2010-11-18
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