Invention Grant
- Patent Title: Film forming method of silicon oxide film, silicon oxide film, semiconductor device, and manufacturing method of semiconductor device
- Patent Title (中): 氧化硅膜的成膜方法，氧化硅膜，半导体装置及半导体装置的制造方法
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Application No.: US12992209Application Date: 2009-05-11
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Publication No.: US08486792B2Publication Date: 2013-07-16
- Inventor: Hirokazu Ueda , Yoshinobu Tanaka , Yusuke Ohsawa , Toshihisa Nozawa , Takaaki Matsuoka
- Applicant: Hirokazu Ueda , Yoshinobu Tanaka , Yusuke Ohsawa , Toshihisa Nozawa , Takaaki Matsuoka
- Applicant Address: JP
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP
- Agency: Cantor Colburn LLP
- Priority: JP2008-224162 20080901; JP2009-036749 20090219
- International Application: PCT/JP2009/059106 WO 20090511
- International Announcement: WO2009/139485 WO 20091119
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/76 ; H01L21/302
Abstract:
A silicon compound gas, an oxidizing gas, and a rare gas are supplied into a chamber (2) of a plasma processing apparatus (1). A microwave is supplied into the chamber (2), and a silicon oxide film is formed on a target substrate with plasma generated by the microwave. A partial pressure ratio of the rare gas is 10% or more of a total gas pressure of the silicon compound gas, the oxidizing gas, and the rare gas, and an effective flow ratio of the silicon compound gas and the oxidizing gas (oxidizing gas/silicon compound gas) is not less than 3 but not more than 11.
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