Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11928912Application Date: 2007-10-30
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Publication No.: US08486804B2Publication Date: 2013-07-16
- Inventor: Shunpei Yamazaki , Masahiro Katayama , Yoshiaki Oikawa , Atsushi Hirose , Masayuki Sakakura
- Applicant: Shunpei Yamazaki , Masahiro Katayama , Yoshiaki Oikawa , Atsushi Hirose , Masayuki Sakakura
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2006-295929 20061031
- Main IPC: H01L21/302
- IPC: H01L21/302

Abstract:
A semiconductor device including a first element including a photodiode and an amplifier circuit which amplifies output current of the photodiode, over a first insulating film; and a second element including a color filter and an overcoat layer over the color filter over a second insulating film is manufactured. The first element and the second element are attached to each other by bonding the first insulating film and the second insulating film with a bonding material. Further, the amplifier circuit is a current mirror circuit including a thin film transistor. Still further, a color film may be used instead of a color filter.
Public/Granted literature
- US20080099664A1 SEMICONDUCTOR DEVICE Public/Granted day:2008-05-01
Information query
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