Invention Grant
US08486806B2 Method for machining wafers by cutting partway through a peripheral surplus region to form break starting points 有权
通过周边剩余区域切割中间切削加工晶圆以形成断裂起点的方法

  • Patent Title: Method for machining wafers by cutting partway through a peripheral surplus region to form break starting points
  • Patent Title (中): 通过周边剩余区域切割中间切削加工晶圆以形成断裂起点的方法
  • Application No.: US13217468
    Application Date: 2011-08-25
  • Publication No.: US08486806B2
    Publication Date: 2013-07-16
  • Inventor: Shunichiro Hirosawa
  • Applicant: Shunichiro Hirosawa
  • Applicant Address: JP Tokyo
  • Assignee: Disco Corporation
  • Current Assignee: Disco Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Greer, Burns & Crain, Ltd.
  • Priority: JP2010-202845 20100910
  • Main IPC: H01L21/00
  • IPC: H01L21/00
Method for machining wafers by cutting partway through a peripheral surplus region to form break starting points
Abstract:
A wafer having a device region and a peripheral surplus region surrounding the device region is divided into individual devices. The back side of the device region is ground to form an annular reinforcement part on the outer peripheral side thereof. A dicing tape is adhered to the back side of the wafer, and the wafer is irradiated with a laser beam from the face side so as to divide the wafer into the devices and to form break starting points in the annular reinforcement part. The dicing tape is expanded so as to disassemble the annular reinforcement part, with the break starting points as starting points, thereby separating the annular reinforcement part from the device region, and widening the interval between the adjacent devices. Since the annular reinforcement part is intact when the wafer is divided, handleability during the divided process is not spoiled.
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