Invention Grant
- Patent Title: Modulating implantation for improved workpiece splitting
- Patent Title (中): 调整植入以改善工件分裂
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Application No.: US12909225Application Date: 2010-10-21
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Publication No.: US08487280B2Publication Date: 2013-07-16
- Inventor: Gary E. Dickerson , Julian G. Blake
- Applicant: Gary E. Dickerson , Julian G. Blake
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: G21K5/00
- IPC: G21K5/00

Abstract:
A first species is implanted into an entire surface of a workpiece and helium is implanted into this entire surface with a non-uniform dose. The first species may be, for example, hydrogen, helium, or nitrogen. The helium has a higher dose at a portion of a periphery of the workpiece. When the workpiece is split, this split is initiated at the periphery with the higher dose. The non-uniform dose may be formed by altering a scan speed of the workpiece or an ion beam current of the helium. In one instance, the non-uniform dose of the helium is larger than a uniform dose of the hydrogen.
Public/Granted literature
- US20120097868A1 MODULATING IMPLANTATION FOR IMPROVED WORKPIECE SPLITTING Public/Granted day:2012-04-26
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