Invention Grant
- Patent Title: Thin film transistor with a semiconductor layer that includes a microcrystalline semiconductor layer and display device
- Patent Title (中): 具有包括微晶半导体层和显示装置的半导体层的薄膜晶体管
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Application No.: US13010281Application Date: 2011-01-20
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Publication No.: US08487309B2Publication Date: 2013-07-16
- Inventor: Koji Oda , Tomoyuki Irizumi , Naoki Nakagawa , Takeshi Ono
- Applicant: Koji Oda , Tomoyuki Irizumi , Naoki Nakagawa , Takeshi Ono
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-028821 20100212
- Main IPC: H01L29/786
- IPC: H01L29/786
Abstract:
An exemplary aspect of the present invention is a thin film transistor including: a gate electrode formed on a substrate; a gate insulating film that includes a nitride film and covers the gate electrode; and a semiconductor layer that is disposed to be opposed to the gate electrode with the gate insulating film interposed therebetween, and has a microcrystalline semiconductor layer formed in at least an interface in contact with the nitride film, in which the microcrystalline semiconductor layer contains oxygen at a concentration higher than that of contained nitrogen in at least the vicinity of the interface with the nitride film, the nitrogen being diffused from the nitride film.
Public/Granted literature
- US20110198606A1 THIN FILM TRANSISTOR AND DISPLAY DEVICE Public/Granted day:2011-08-18
Information query
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