Invention Grant
US08487343B2 Semiconductor device, semiconductor integrated circuit device for use of driving plasma display with using same, and plasma display apparatus
失效
半导体装置，使用该驱动等离子体显示器的半导体集成电路装置以及等离子体显示装置
- Patent Title: Semiconductor device, semiconductor integrated circuit device for use of driving plasma display with using same, and plasma display apparatus
- Patent Title (中): 半导体装置，使用该驱动等离子体显示器的半导体集成电路装置以及等离子体显示装置
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Application No.: US12825839Application Date: 2010-06-29
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Publication No.: US08487343B2Publication Date: 2013-07-16
- Inventor: Shinji Shirakawa , Junichi Sakano , Kenji Hara
- Applicant: Shinji Shirakawa , Junichi Sakano , Kenji Hara
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2009-154524 20090630
- Main IPC: H01L29/739
- IPC: H01L29/739
Abstract:
A horizontal-type IGBT having a large current density, which is formed on a SOI substrate, has an emitter region, which is made up with two (2) or more of base-layers of a second conductivity-type on an oxide film groove, wherein the base-layers of the second conductivity-type in the emitter region are covered with a layer of a first conductivity-type, being high in the conductivity than a drift layer, and length of a gate electrode on the oxide film groove is reduced than the length of the gate electrode on the collector, and further the high-density layer of the first conductivity-type is formed below the base layer of the second conductivity-type on the collector, thereby achieving the high density of the layer of the first conductivity-type while maintaining an endurable voltage, and an increase of the current density.
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