Invention Grant
US08487371B2 Vertical MOSFET transistor having source/drain contacts disposed on the same side and method for manufacturing the same
有权
具有设置在同一侧的源极/漏极触点的垂直MOSFET晶体管及其制造方法
- Patent Title: Vertical MOSFET transistor having source/drain contacts disposed on the same side and method for manufacturing the same
- Patent Title (中): 具有设置在同一侧的源极/漏极触点的垂直MOSFET晶体管及其制造方法
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Application No.: US13074921Application Date: 2011-03-29
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Publication No.: US08487371B2Publication Date: 2013-07-16
- Inventor: Daniel M. Kinzer , Steven Sapp , Chung-Lin Wu , Oseob Jeon , Bigildis Dosdos
- Applicant: Daniel M. Kinzer , Steven Sapp , Chung-Lin Wu , Oseob Jeon , Bigildis Dosdos
- Applicant Address: US ME South Portland
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US ME South Portland
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L23/62 ; H01L27/088 ; H01L21/338
Abstract:
Systems and methods of fabricating Wafer Level Chip Scale Packaging (WLCSP) devices with transistors having source, drain and gate contacts on one side of the transistor while still having excellent electrical performance with low drain-to-source resistance RDS(on) include using a two-metal drain contact technique. The RDS(on) is further improved by using a through-silicon-via (TSV) technique to form a drain contact or by using a copper layer closely connected to the drain drift.
Public/Granted literature
- US20120248526A1 Wafer Level MOSFET Metallization Public/Granted day:2012-10-04
Information query
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