Invention Grant
US08487372B1 Trench MOSFET layout with trenched floating gates and trenched channel stop gates in termination
有权
沟槽MOSFET布局与沟槽浮动栅极和沟槽通道停止门终止
- Patent Title: Trench MOSFET layout with trenched floating gates and trenched channel stop gates in termination
- Patent Title (中): 沟槽MOSFET布局与沟槽浮动栅极和沟槽通道停止门终止
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Application No.: US13650346Application Date: 2012-10-12
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Publication No.: US08487372B1Publication Date: 2013-07-16
- Inventor: Fu-Yuan Hsieh
- Applicant: Force Mos Technology Co., Ltd.
- Applicant Address: TW New Taipei
- Assignee: Force Mos Technology Co., Ltd.
- Current Assignee: Force Mos Technology Co., Ltd.
- Current Assignee Address: TW New Taipei
- Agency: Bacon & Thomas, PLLC
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
A trench MOSFET layout with multiple trenched floating gates and at least one trenched channel stop gate in termination area shorted with drain region is disclosed to make it feasibly achieved after die sawing. The layout consisted of dual trench MOSFETs connected together with multiple sawing trenched gates across a space between the two trench MOSFETs having a width same as scribe line.
Information query
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