Invention Grant
US08487373B2 SONOS memory cells having non-uniform tunnel oxide and methods for fabricating same
有权
具有不均匀隧道氧化物的SONOS存储单元及其制造方法
- Patent Title: SONOS memory cells having non-uniform tunnel oxide and methods for fabricating same
- Patent Title (中): 具有不均匀隧道氧化物的SONOS存储单元及其制造方法
-
Application No.: US12432441Application Date: 2009-04-29
-
Publication No.: US08487373B2Publication Date: 2013-07-16
- Inventor: Shenqing Fang , Gang Xue , Wenmei Li , Inkuk Kang
- Applicant: Shenqing Fang , Gang Xue , Wenmei Li , Inkuk Kang
- Applicant Address: US CA Sunnyvale
- Assignee: Spanion LLC
- Current Assignee: Spanion LLC
- Current Assignee Address: US CA Sunnyvale
- Main IPC: H01L21/331
- IPC: H01L21/331
Abstract:
Methods for forming a memory cell are disclosed. A method includes forming a source-drain structure in a semiconductor substrate where the source-drain structure includes a rounded top surface and sidewall surfaces. An oxide layer is formed on the top and sidewall surfaces of the source-drain structure. The thickness of the portion of the oxide layer that is formed on the top surface of the source-drain structure is greater than the thickness of the portion of the oxide layer that is formed on the sidewall surfaces of the source-drain structure.
Public/Granted literature
- US20100276746A1 SONOS MEMORY CELLS HAVING NON-UNIFORM TUNNEL OXIDE AND METHODS FOR FABRICATING SAME Public/Granted day:2010-11-04
Information query
IPC分类:
