Invention Grant
US08487379B2 Structure and method for buried inductors for ultra-high resistivity wafers for SOI/RF SiGe applications
有权
SOI / RF SiGe应用的超高电阻率晶圆掩埋电感的结构和方法
- Patent Title: Structure and method for buried inductors for ultra-high resistivity wafers for SOI/RF SiGe applications
- Patent Title (中): SOI / RF SiGe应用的超高电阻率晶圆掩埋电感的结构和方法
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Application No.: US13453426Application Date: 2012-04-23
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Publication No.: US08487379B2Publication Date: 2013-07-16
- Inventor: Max G. Levy , Steven H. Voldman
- Applicant: Max G. Levy , Steven H. Voldman
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Anthony Canale
- Main IPC: H01L27/12
- IPC: H01L27/12
Abstract:
A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a high resistivity substrate and a buried inductor formed directly in the high resistivity substrate and devoid of an insulating layer therebetween.
Public/Granted literature
- US20120205741A1 STRUCTURE AND METHOD FOR BURIED INDUCTORS FOR ULTRA-HIGH RESISTIVITY WAFERS FOR SOI/RF SIGE APPLICATIONS Public/Granted day:2012-08-16
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