Invention Grant
US08487384B2 Semiconductor device, power-supply unit, amplifier and method of manufacturing semiconductor device
有权
半导体器件，电源单元，放大器及半导体器件的制造方法
- Patent Title: Semiconductor device, power-supply unit, amplifier and method of manufacturing semiconductor device
- Patent Title (中): 半导体器件，电源单元，放大器及半导体器件的制造方法
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Application No.: US13369409Application Date: 2012-02-09
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Publication No.: US08487384B2Publication Date: 2013-07-16
- Inventor: Norikazu Nakamura , Shirou Ozaki , Masayuki Takeda , Keiji Watanabe
- Applicant: Norikazu Nakamura , Shirou Ozaki , Masayuki Takeda , Keiji Watanabe
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2011-031109 20110216
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A semiconductor device, includes a semiconductor layer formed above a substrate; an insulating film formed on the semiconductor layer; and an electrode formed on the insulating film. The insulating film has a membrane stress at a side of the semiconductor layer lower than a membrane stress at a side of the electrode.
Public/Granted literature
- US20120205663A1 SEMICONDUCTOR DEVICE, POWER-SUPPLY UNIT, AMPLIFIER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2012-08-16
Information query
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