Invention Grant
- Patent Title: Memory cell with stress-induced anisotropy
- Patent Title (中): 具有应力诱导各向异性的记忆体
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Application No.: US12418911Application Date: 2009-04-06
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Publication No.: US08487390B2Publication Date: 2013-07-16
- Inventor: Dimitar V. Dimitrov , Ivan Petrov Ivanov , Shuiyuan Huang , Antoine Khoueir , Brian Lee , John Daniel Stricklin , Olle Gunnar Heinonen , Insik Jin
- Applicant: Dimitar V. Dimitrov , Ivan Petrov Ivanov , Shuiyuan Huang , Antoine Khoueir , Brian Lee , John Daniel Stricklin , Olle Gunnar Heinonen , Insik Jin
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: Mueting Raasch & Gebhardt PA
- Main IPC: H01L29/82
- IPC: H01L29/82 ; G11C11/14
Abstract:
A magnetic memory element that has a stress-induced magnetic anisotropy. The memory element has a ferromagnetic free layer having a switchable magnetization orientation switchable, a ferromagnetic reference layer having a pinned magnetization orientation, and a non-magnetic spacer layer therebetween. The free layer may be circular, essentially circular or nearly circular.
Public/Granted literature
- US20100084724A1 MEMORY CELL WITH STRESS-INDUCED ANISOTROPY Public/Granted day:2010-04-08
Information query
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