Invention Grant
- Patent Title: B-sialon phosphor, use thereof and method for producing same
- Patent Title (中): B-赛隆荧光体及其制造方法
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Application No.: US13125228Application Date: 2010-06-04
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Publication No.: US08487393B2Publication Date: 2013-07-16
- Inventor: Hideyuki Emoto , Toshiaki Nagumo
- Applicant: Hideyuki Emoto , Toshiaki Nagumo
- Applicant Address: JP Tokyo
- Assignee: Denki Kagaku Kogyo Kabushiki Kaisha
- Current Assignee: Denki Kagaku Kogyo Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Stein IP, LLC
- Priority: JP2009-138524 20090609
- International Application: PCT/JP2010/059508 WO 20100604
- International Announcement: WO2010/143590 WO 20101216
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
An Eu-activated β-sialon phosphor showing a high luminance, the use thereof and the method of producing the same. The β-sialon phosphor includes, as a matrix, a β-sialon crystal represented by a general formula: Si6-zAlzOzN8-z (0
Public/Granted literature
- US20110198656A1 B-SIALON PHOSPHOR, USE THEREOF AND METHOD FOR PRODUCING SAME Public/Granted day:2011-08-18
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