Invention Grant
- Patent Title: High performance system-on-chip using post passivation process
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Application No.: US11877649Application Date: 2007-10-23
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Publication No.: US08487400B2Publication Date: 2013-07-16
- Inventor: Mou-Shiung Lin
- Applicant: Mou-Shiung Lin
- Applicant Address: TW Hsinchu
- Assignee: Megica Corporation
- Current Assignee: Megica Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Seyfarth Shaw LLP
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
The present invention extends the above referenced continuation-in-part application by in addition creating high quality electrical components, such as inductors, capacitors or resistors, on a layer of passivation or on the surface of a thick layer of polymer. In addition, the process of the invention provides a method for mounting discrete electrical components at a significant distance removed from the underlying silicon surface.
Public/Granted literature
- US20080042239A1 High performance system-on-chip using post passivation process Public/Granted day:2008-02-21
Information query
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