Invention Grant
- Patent Title: Indium phosphide substrate manufacturing method, epitaxial wafer manufacturing method indium phosphide substrate, and epitaxial wafer
- Patent Title (中): 磷化铟衬底制造方法，外延晶片制造方法铟磷化物衬底和外延晶片
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Application No.: US13125048Application Date: 2010-01-12
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Publication No.: US08487409B2Publication Date: 2013-07-16
- Inventor: Kyoko Okita
- Applicant: Kyoko Okita
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agent James W. Judge
- Priority: JP2009-102018 20090420
- International Application: PCT/JP2010/050193 WO 20100112
- International Announcement: WO2010/122821 WO 20101028
- Main IPC: H01L29/20
- IPC: H01L29/20
Abstract:
Affords methods of manufacturing InP substrates, methods of manufacturing epitaxial wafers, InP substrates, and eptiaxial wafers whereby deterioration of the electrical characteristics can be kept under control, and at the same time, deterioration of the PL characteristics can be kept under control. An InP substrate manufacturing method of the present invention is provided with the following steps. An InP substrate is prepared (Steps S1 through S3). The InP substrate is washed with sulfuric acid/hydrogen peroxide (Step S5). After the step of washing with sulfuric acid/hydrogen peroxide (Step S5), the InP substrate is washed with phosphoric acid (Step S6).
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