Invention Grant
US08487411B2 Multiple patterning using improved patternable low-κ dielectric materials
失效
使用改进的可图案化的低kappa介电材料进行多重图案化
- Patent Title: Multiple patterning using improved patternable low-κ dielectric materials
- Patent Title (中): 使用改进的可图案化的低kappa介电材料进行多重图案化
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Application No.: US13407141Application Date: 2012-02-28
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Publication No.: US08487411B2Publication Date: 2013-07-16
- Inventor: Qinghuang Lin
- Applicant: Qinghuang Lin
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Daniel P. Morris, Esq.
- Main IPC: H01L23/58
- IPC: H01L23/58
Abstract:
A double patterned semiconductor structure is provided. The structure includes a first patterned and cured low-k structure located on a first portion of an antireflective coating, and a second patterned and cured low-k structure located on a second portion of the antireflective coating, wherein the second patterned and cured low-k structure is spaced apart from the first patterned and cured low-k dielectric structure.
Public/Granted literature
- US20120161296A1 MULTIPLE PATTERNING USING IMPROVED PATTERNABLE LOW-k DIELECTRIC MATERIALS Public/Granted day:2012-06-28
Information query
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