Invention Grant
US08487423B2 Interconnect structure of semiconductor integrated circuit and semiconductor device including the same 有权
半导体集成电路的互连结构和包括其的半导体器件

Interconnect structure of semiconductor integrated circuit and semiconductor device including the same
Abstract:
In a semiconductor integrated circuit chip including an interconnect layer in which there is a limitation on the lengths of interconnects or areas occupied by the interconnects, empty spaces between power supply interconnect segments having the same potential located in parallel to a priority interconnect direction, are shifted relative to each other within the limits of the lengths and areas of power supply interconnects. As a result, a local increase in resistance is dispersed, whereby an influence on a voltage drop is reduced.
Information query
Patent Agency Ranking
0/0