Invention Grant
US08487445B1 Semiconductor device having through electrodes protruding from dielectric layer
有权
具有从电介质层突出的贯通电极的半导体装置
- Patent Title: Semiconductor device having through electrodes protruding from dielectric layer
- Patent Title (中): 具有从电介质层突出的贯通电极的半导体装置
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Application No.: US12898192Application Date: 2010-10-05
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Publication No.: US08487445B1Publication Date: 2013-07-16
- Inventor: Won Chul Do , Yeon Seung Jung , Yong Jae Ko
- Applicant: Won Chul Do , Yeon Seung Jung , Yong Jae Ko
- Applicant Address: US AZ Chandler
- Assignee: Amkor Technology, Inc.
- Current Assignee: Amkor Technology, Inc.
- Current Assignee Address: US AZ Chandler
- Agency: McKay and Hodgson, LLP
- Agent Scott J. Hodgson
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A semiconductor device and a manufacturing method thereof are provided. In one embodiment of the manufacturing method of the semiconductor device, a through electrode is formed on a semiconductor die, and a dielectric layer such as a photopolymer is coated on the through electrode to cover the through electrode. Under exposure is performed on the dielectric layer, thereby partially removing the dielectric layer by development. As a result, a top end of the through electrode is exposed to the outside or protrudes through the dielectric layer. The dielectric layer remaining on the top end of the through electrode may be removed by performing a plasma descum process, if needed.
Information query
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