Invention Grant
- Patent Title: Reference voltage generating circuit of semiconductor memory apparatus
- Patent Title (中): 半导体存储装置的基准电压发生电路
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Application No.: US11822270Application Date: 2007-07-03
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Publication No.: US08487603B2Publication Date: 2013-07-16
- Inventor: Khil-Ohk Kang
- Applicant: Khil-Ohk Kang
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Venable LLP
- Agent Jeffri A. Kaminski
- Priority: KR10-2006-0111436 20061113
- Main IPC: G05F1/595
- IPC: G05F1/595 ; G05F1/613 ; G05F1/614
Abstract:
A voltage generating circuit of semiconductor integrated circuit includes: a voltage controller that detects the level of an external supply voltage and outputs a voltage control signal; a voltage supplier that outputs the external supply voltage or a first internal voltage in response to the voltage control signal; and a first reference voltage generator that is supplied with an output voltage of the voltage supplier and generates a first reference voltage.
Public/Granted literature
- US20080111533A1 Voltage generating circuit of semiconductor integrated circuit Public/Granted day:2008-05-15
Information query
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