Invention Grant
- Patent Title: Semiconductor integrated circuit
- Patent Title (中): 半导体集成电路
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Application No.: US13067645Application Date: 2011-06-16
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Publication No.: US08487648B2Publication Date: 2013-07-16
- Inventor: Masashi Kurokawa , Kenichi Kawakami
- Applicant: Masashi Kurokawa , Kenichi Kawakami
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2008-075254 20080324
- Main IPC: H03K17/16
- IPC: H03K17/16

Abstract:
A semiconductor integrated circuit includes a macro connected between a first power supply line and a second power supply line to drive a load, and a power-supply-noise cancelling circuit connected between an input and an output of the macro to generate a current for canceling one of a current flowing from the first power supply line to the output of the macro and a current flowing from the output of the macro to the second power supply line, on the basis of a potential difference between the input and the output of the macro. The macro and the power-supply-noise cancelling circuit are mounted in a same chip.
Public/Granted literature
- US20110248741A1 Semiconductor integrated circuit Public/Granted day:2011-10-13
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