Invention Grant
- Patent Title: Capacitor structure
- Patent Title (中): 电容结构
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Application No.: US12841456Application Date: 2010-07-22
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Publication No.: US08488299B2Publication Date: 2013-07-16
- Inventor: Shih-Hsien Wu , Min-Lin Lee , Shinn-Juh Lai , Shur-Fen Liu , Meng-Hua Chen , Chin-Hsien Hung
- Applicant: Shih-Hsien Wu , Min-Lin Lee , Shinn-Juh Lai , Shur-Fen Liu , Meng-Hua Chen , Chin-Hsien Hung
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Morris Manning & Martin LLP
- Agent Tim Tingkang Xia, Esq.
- Priority: TW98124852A 20090723
- Main IPC: H01G4/005
- IPC: H01G4/005 ; H01G5/06

Abstract:
The disclosure provides a capacitor structure. A first dielectric layer is disposed over the first electrode layer. A second electrode layer is disposed over the first dielectric layer. At least one of the first electrode layer and the second electrode layer has a peak-valley like structure to create at least two different gap distances therebetween, thereby providing parallel combinations of at least two different capacitances.
Public/Granted literature
- US20110019335A1 CAPACITOR STRUCTURE Public/Granted day:2011-01-27
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