Invention Grant
- Patent Title: Current and temperature sensing of standard field-effect transistors
- Patent Title (中): 标准场效应晶体管的电流和温度检测
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Application No.: US12999131Application Date: 2009-07-23
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Publication No.: US08489357B2Publication Date: 2013-07-16
- Inventor: Jack L. Glenn , Mark A. Gose , Peter A. Laubenstein , Seyed R. Zarabadi
- Applicant: Jack L. Glenn , Mark A. Gose , Peter A. Laubenstein , Seyed R. Zarabadi
- Applicant Address: US MI Troy
- Assignee: Delphi Technologies, Inc.
- Current Assignee: Delphi Technologies, Inc.
- Current Assignee Address: US MI Troy
- Agent J. Gordon Lewis
- International Application: PCT/US2009/051512 WO 20090723
- International Announcement: WO2010/011825 WO 20100128
- Main IPC: G01K7/16
- IPC: G01K7/16
Abstract:
An apparatus and method of determining the junction temperature (Tj) and drain-source current (Ids) of a standard FET within a multi-FET module includes a control IC managing one or more 3 terminal standard FETs within the same package, calculating Tj and Tds for one or more FETs in one or more packages, and protecting each FET against short circuit faults while allowing high current transients, such as inrush currents from a lamp load.
Public/Granted literature
- US20110112792A1 CURRENT AND TEMPERATURE SENSING OF STANDARD FIELD-EFFECT TRANSISTORS Public/Granted day:2011-05-12
Information query
