Invention Grant
- Patent Title: Method of generating cracks in polycrystalline silicon rod and crack generating apparatus
- Patent Title (中): 在多晶硅棒和裂纹发生装置中产生裂纹的方法
-
Application No.: US12805308Application Date: 2010-07-23
-
Publication No.: US08490901B2Publication Date: 2013-07-23
- Inventor: Syuuhei Hayashida
- Applicant: Syuuhei Hayashida
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Materials Corporation
- Current Assignee: Mitsubishi Materials Corporation
- Current Assignee Address: JP Tokyo
- Agency: Edwards Wildman Palmer LLP
- Priority: JP2009-175441 20090728
- Main IPC: B02C19/00
- IPC: B02C19/00
Abstract:
A method of generating cracks in a polycrystalline silicon rod, comprising: heating a polycrystalline silicon rod; and subsequently performing local portion cooling of the polycrystalline silicon rod to apply a refrigerant fluid onto a spot-like area of a surface of the polycrystalline silicon rod.
Public/Granted literature
- US20110024533A1 Method of generating cracks in polycrystalline silicon rod and crack generating apparatus Public/Granted day:2011-02-03
Information query
