A method for forming a vertically stacked memory device includes forming a first dielectric material overlying a surface region of a semiconductor substrate, forming first memory cells overlying the first dielectric material including a first top metal wiring spatially extending in a first direction, a first bottom metal wiring spatially extending in a second direction orthogonal to the first direction, and first switching elements sandwiched in intersection regions between the first top metal wiring and the first bottom metal wiring, forming a second dielectric material overlying the first top metal wiring, forming second memory cells overlying the second dielectric material including a second top metal wiring extending in the first direction, a second bottom wiring spatially extending in the second direction, and second switching elements sandwiched in intersection regions of the second top metal wiring and the second bottom metal wiring.