Invention Grant
- Patent Title: Semiconductor device with electrically floating body
- Patent Title (中): 具有电浮体的半导体器件
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Application No.: US13547717Application Date: 2012-07-12
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Publication No.: US08492209B2Publication Date: 2013-07-23
- Inventor: Serguei Okhonin
- Applicant: Serguei Okhonin
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wilmer Cutler Pickering Hale and Dorr LLP
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A semiconductor device along with circuits including the same and methods of operating the same are described. The device includes an electrically floating body region, and a gate is disposed over a first portion of the body region. The device includes a source region adjoining a second portion of the body region, the second portion adjacent the first portion and separating the source region from the first portion. The device includes a drain region adjoining a third portion of the body region, the third portion adjacent the first portion and separating the drain region from the first portion.
Public/Granted literature
- US20120273888A1 SEMICONDUCTOR DEVICE WITH ELECTRICALLY FLOATING BODY Public/Granted day:2012-11-01
Information query
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