Removal of an overlap of dual stress liners

Invention Grant

US08492218B1 Removal of an overlap of dual stress liners 失效

Title translation: 去除双重应力衬垫的重叠

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Patent Title: Removal of an overlap of dual stress liners
Patent Title (中): 去除双重应力衬垫的重叠
Application No.: US13438422

Application Date: 2012-04-03
Publication No.: US08492218B1

Publication Date: 2013-07-23
Inventor: Ming Cai , Aimin Xing , Chandra Reddy
Applicant: Ming Cai , Aimin Xing , Chandra Reddy
Applicant Address: US NY Armonk KY Grand Cayman
Assignee: International Business Machines Corporation,Global Foundries, Inc.
Current Assignee: International Business Machines Corporation,Global Foundries, Inc.
Current Assignee Address: US NY Armonk KY Grand Cayman
Agency: Scully, Scott, Murphy & Presser, P.C.
Agent Yuanmin Cai
Main IPC: H01L21/8238
IPC: H01L21/8238

Removal of an overlap of dual stress liners

Abstract:

A first liner and a second liner are formed such that a peripheral portion of the second liner overlies a peripheral portion of the first liner. A photoresist layer is applied and patterned such that a sidewall of a patterned photoresist layer overlies an overlapping peripheral portion of the second liner An isotropic dry etch is performed to laterally etch the overlapping peripheral portion of the second liner from below the patterned photoresist layer. The patterned photoresist is subsequently removed, and a structure without an overlap of the first and second liners is provided.

Abstract(Chinese):

形成第一衬里和第二衬里，使得第二衬垫的周边部分覆盖在第一衬里的周边部分上。施加光致抗蚀剂层并构图，使得图案化光致抗蚀剂层的侧壁覆盖在第二衬垫的重叠周边部分上。执行各向同性干法蚀刻以从图案化光致抗蚀剂层的下面横向蚀刻第二衬里的重叠周边部分。随后去除图案化的光致抗蚀剂，并且提供没有第一和第二衬垫的重叠的结构。

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS