Method of manufacturing semiconductor device and substrate processing apparatus

Invention Grant

US08492258B2 Method of manufacturing semiconductor device and substrate processing apparatus 有权

Title translation: 制造半导体器件和衬底处理设备的方法

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Patent Title: Method of manufacturing semiconductor device and substrate processing apparatus
Patent Title (中): 制造半导体器件和衬底处理设备的方法
Application No.: US13341428

Application Date: 2011-12-30
Publication No.: US08492258B2

Publication Date: 2013-07-23
Inventor: Kazuhiro Harada
Applicant: Kazuhiro Harada
Applicant Address: JP Tokyo
Assignee: Hitachi Kokusai Electric Inc.
Current Assignee: Hitachi Kokusai Electric Inc.
Current Assignee Address: JP Tokyo
Agency: Oliff & Berridge, PLC
Priority: JP2008-166405 20080625; JP2009-116906 20090513
Main IPC: H01L21/3205
IPC: H01L21/3205 ; H01L21/31 ; H01L21/469 ; H01L21/02 ; H01L29/94

Method of manufacturing semiconductor device and substrate processing apparatus

Abstract:

A manufacturing method of a semiconductor device of the present invention includes the step of forming an insulating film on a substrate, and the step of forming a high dielectric constant insulating film on the insulating film, and the step of forming a titanium aluminum nitride film on the high dielectric constant insulating film, wherein in the step of forming the titanium aluminum nitride film, formation of an aluminum nitride film and formation of a titanium nitride film are alternately repeated, and at that time, the aluminum nitride film is formed firstly and/or lastly.

Abstract(Chinese):

本发明的半导体器件的制造方法包括在基板上形成绝缘膜的步骤，以及在绝缘膜上形成高介电常数绝缘膜的步骤，以及在氮化铝上形成氮化铝膜的步骤高介电常数绝缘膜，其中在形成氮化铝钛膜的步骤中，交替地重复形成氮化铝膜和形成氮化钛膜，此时首先形成氮化铝膜和/ 或最后。

Public/Granted literature

US20120152170A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2012-06-21

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）