Invention Grant
- Patent Title: Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
- Patent Title (中): 化学机械抛光水性分散体和化学机械抛光方法
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Application No.: US12537766Application Date: 2009-08-07
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Publication No.: US08492276B2Publication Date: 2013-07-23
- Inventor: Taichi Abe , Hirotaka Shida , Akihiro Takemura , Mitsuru Meno , Shinichi Hirasawa , Kenji Iwade , Takeshi Nishioka
- Applicant: Taichi Abe , Hirotaka Shida , Akihiro Takemura , Mitsuru Meno , Shinichi Hirasawa , Kenji Iwade , Takeshi Nishioka
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: JSR Corporation,Kabushiki Kaisha Toshiba
- Current Assignee: JSR Corporation,Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-240851 20080919
- Main IPC: H01L21/3212
- IPC: H01L21/3212
Abstract:
A chemical mechanical polishing aqueous dispersion is used to polish a polishing target that includes an interconnect layer that contains tungsten. The chemical mechanical polishing aqueous dispersion includes: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica particles. The content (MA) (mass %) of the cationic water-soluble polymer (A) and the content (MB) (mass %) of the iron (III) compound (B) satisfy the relationship “MA/MB=0.004 to 0.1”. The chemical mechanical polishing aqueous dispersion has a pH of 1 to 3.
Public/Granted literature
- US20100075501A1 CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION AND CHEMICAL MECHANICAL POLISHING METHOD Public/Granted day:2010-03-25
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